Journal of Nanomaterials / 2015 / Article / Tab 4

Research Article

Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 4

The values of drain current of FinFET and MOSFET transistors.

Number of transistors in seriesMOSFETFinFET
Width (nm)Current (nA)TFIN (nm)HFIN (nm)NFINCurrent (nA)

n-type
 116.0061.4910.0010.00165.79
 232.0097.0810.0010.002131.57
 348.00166.2310.0010.003197.36
 464.00235.1910.0010.004263.14
 8128.00510.7510.0010.008526.29
 10160.00648.1810.0010.0010657.86

p-type
 232.0047.3717.0017.00263.32
 464.00116.3817.0017.004126.64
 580.00150.8617.0017.005158.30
 696.00185.3317.0017.006190.00
 8128.00254.2617.0017.008253.30
 8/342.6670.37717.0019.00270.77
 9144.00288.7317.0017.009283.90
 12192.00392.1117.0017.0012379.90

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