Design and Performance Analysis of 1-Bit FinFET Full Adder Cells for Subthreshold Region at 16 nm Process Technology

Table 6

Average power dissipation of MOSFET and FinFET full adder.

Full adder	Average power dissipation (W)
	MOSFET	FinFET
CMOS	2.30 × 10^−9	8.41 × 10^−10
HCMOS	1.40 × 10^−9	3.17 × 10^−10
CPL	1.69 × 10^−9	5.23 × 10^−10
TG	1.74 × 10^−9	7.41 × 10^−10