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Journal of Nanomaterials
Volume 2015, Article ID 782786, 6 pages
http://dx.doi.org/10.1155/2015/782786
Research Article

Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials

Department of Electronic Engineering, National United University, No. 1 Lienda, Miaoli 36003, Taiwan

Received 1 September 2015; Accepted 23 November 2015

Academic Editor: Christian Brosseau

Copyright © 2015 Yu-Hsien Lin and Jay-Chi Chou. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Yu-Hsien Lin and Jay-Chi Chou, “Interface Study on Amorphous Indium Gallium Zinc Oxide Thin Film Transistors Using High-k Gate Dielectric Materials,” Journal of Nanomaterials, vol. 2015, Article ID 782786, 6 pages, 2015. https://doi.org/10.1155/2015/782786.