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Journal of Nanomaterials
Volume 2015, Article ID 802178, 6 pages
Research Article

Controlled Orientation and Improved Photovoltaic Characteristics of Cu(In,Ga)Se2 Solar Cells via Using In2Se3 Seeding Layers

Department of Chemical Engineering, National Taiwan University, Taipei, Taiwan

Received 8 October 2014; Accepted 12 December 2014

Academic Editor: Victor M. Castaño

Copyright © 2015 Fu-Shan Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


In2Se3 films were utilized as seeding layers in the synthesis of Cu(In,Ga)Se2 films via the spin-coating route. Selenizing the indium-containing precursors at 400°C resulted in the formation of the hexagonal γ-In2Se3 with the preferred (006) orientation. Increasing the selenization temperature to 500°C yielded the (300)-oriented γ-In2Se3. Using the preferred (006)-oriented In2Se3 as seeding layers produced the preferred (112)-oriented Cu(In,Ga)Se2 film because of the crystalline symmetry. In contrast, the use of the (300)-oriented In2Se3 as seeding layers yielded the (220/204)-oriented Cu(In,Ga)Se2 films. According to results obtained using SEM and the Hall effect, (112)-oriented Cu(In,Ga)Se2 films had a denser morphology and more favorable electrical properties. Using the (112)-oriented Cu(In,Ga)Se2 films as the absorber layer in the solar devices resulted in a significant increase in the conversion efficiency.