Ferroelectric Polymer Thin Films for Organic Electronics

Figure 9

Capacitance-voltage hysteresis loops of a Pt/PVDF/SiO₂/p-Si gate MFIS stack diode measured with gate voltage sweeps over ±1, ±4 and ±6 V at a rate of 0.05 V/s. The measurement frequency was 100 kHz. The inset shows the width of the memory window as a function of temperature for gate voltage sweeps over ±5 V [15].