Recent Progress in Ohmic/Schottky-Contacted ZnO Nanowire Sensors

Figure 2

(a) Insert is a schematic of a ZnO NW FET. - characteristics under UV illumination and under darkness when  V, and (b) when  mV. (c) Drain-source current measured as a function of time () while the light was on and off when  V, 0 V, and −5 V ( V). (d) as a function of gate voltage. Maximum was obtained at ~ −1 V [40]. Copyright 2009, John Wiley and Sons.

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