Vision-Augmented Molecular Dynamics Simulation of Nanoindentation

Table 2

Details used for the development of MD simulation model.

Dimensions of the silicon workpiece	Crystal orientation of silicon	Number of atoms
16.296 nm × 10.864 nm × 16.296 nm	(010)	144000
15.9667 nm × 10.7548 nm × 15.9667 nm	(110)	137088
15.9667 nm × 11.29 nm × 16.132 nm	(111)	145152
Equilibrium parameters	Silicon: 5.432 Å and Diamond: 3.5656 Å
Indenter and specimen surface distance	1 nm
Depth of indentation	2 nm
Speed of indentation and retraction	20 m/s = 0.02 nm/ps
Diameter of the indenter	4 nm
Boundary conditions	Periodic in and direction
Potential function used	Screening bond order Tersoff potential function [7]