Research Article
Vision-Augmented Molecular Dynamics Simulation of Nanoindentation
Table 2
Details used for the development of MD simulation model.
| Dimensions of the silicon workpiece | Crystal orientation of silicon | Number of atoms |
| 16.296 nm × 10.864 nm × 16.296 nm | (010) | 144000 | 15.9667 nm × 10.7548 nm × 15.9667 nm | (110) | 137088 | 15.9667 nm × 11.29 nm × 16.132 nm | (111) | 145152 | Equilibrium parameters | Silicon: 5.432 Å and Diamond: 3.5656 Å | Indenter and specimen surface distance | 1 nm | Depth of indentation | 2 nm | Speed of indentation and retraction | 20 m/s = 0.02 nm/ps | Diameter of the indenter | 4 nm | Boundary conditions | Periodic in and direction | Potential function used | Screening bond order Tersoff potential function [7] |
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