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Journal of Nanomaterials
Volume 2015, Article ID 864591, 6 pages
http://dx.doi.org/10.1155/2015/864591
Research Article

Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55) Thin Film on Silicon Substrate

1College of Science, Xi’an University of Science and Technology, Xi’an 710054, China
2Lab of Modern Acoustics, Institute of Acoustics, Nanjing University, Nanjing 210093, China

Received 12 September 2015; Accepted 11 October 2015

Academic Editor: Jun Chen

Copyright © 2015 Tao Zhang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The high piezoelectricity and high quality factor ferroelectric thin films are important for electromechanical applications especially the micro electromechanical system (MEMS). The ternary compound ferroelectric thin films 0.06Pb(Mn1/3, Nb2/3)O3 + 0.94Pb(Zr0.45, Ti0.55)O3 (0.06PMnN-0.94PZT(45/55)) were deposited on silicon(100) substrates by RF magnetron sputtering method considering that Mn and Nb doping will improve PZT properties in this research. For comparison, nondoped PZT(45/55) films were also deposited. The results show that both of thin films show polycrystal structures with the main (111) and (101) orientations. The transverse piezoelectric coefficients are  C/m2 and  C/m2, respectively. These thin films exhibit classical ferroelectricity, in which the coercive electric field intensities are  kV/cm and  kV/cm, and the saturation polarization μC/cm2 and μC/cm2, and the remnant polarization μC/cm2 and μC/cm2, respectively. Moreover, the dielectric constants and loss are and % and and %, respectively. In conclusion, 0.06PMnN-0.94PZT(45/55) thin films act better than nondoped films, even though their dielectric constants are higher. Their excellent ferroelectricity, piezoelectricity, and high power and energy storage property, especially the easy fabrication, integration realizable, and potentially high quality factor, make this kind of thin films available for the realistic applications.