Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06PMnN-0.94PZT(45/55) Thin Film on Silicon Substrate

Table 1

The conditions of sputtering.

Target	PMnN + PZT(45/55), PZT(45/55)
Substrate	SRO/Pt/Ti/Si(100)
Gas	O2 : Ar = 1 : 20
Growth temperature	600°C
Pressure	1 Pa
Power	80 W
Thickness	0.30 μm
Postheat treatment	Quenching