Laser-Doping through Anodic Aluminium Oxide Layers for Silicon Solar Cells

Figure 1

SIMS profiles of 4 cm² square laser-doped regions that were formed by scribing laser lines 20 μm apart using a 532 nm laser and a speed of 500 mm/s and laser power of 15 W. In (a) the laser lines were scribed through a spin-coated boron dopant layer. The profiles of detected boron 10 () and boron 11 () are shown. In (b) laser-doping was performed through an AAO layer that was formed by anodising aluminium at 25 V in an electrolyte comprising 0.5 M of H₂SO₄ and 0.5 M of H₃BO₃. The profiles show detected boron 11 () and aluminium (). In (c) laser-doping was performed through an AAO layer formed by anodising aluminium in 0.5 M H₃PO₄ at 37 V. The profile shows detected phosphorus () and aluminium ().

(a)

(b)

(c)