Laser-Doping through Anodic Aluminium Oxide Layers for Silicon Solar Cells

Figure 2

Simulated dopant profile of Al (), B (), and P () assuming a Gaussian diffusion profile, a surface concentration of 10²¹ cm⁻³, and a diffusion time of 30 μs. The open triangles () and circles () represent the simulated doping profile of B and P when the surface concentration was adjusted according to concentration ratio with AAO layer.