Laser-Doping through Anodic Aluminium Oxide Layers for Silicon Solar Cells

Figure 3

ECV profiles showing electrically active p-type dopant concentration in a 4 cm² region which was laser-doped through (a) spin-coated poly boron dopant source() and (b) an AAO layer formed by anodising aluminium at 25 V in an electrolyte comprising 0.5 M of H₂SO₄ and 0.5 M of H₃BO₃ (). Both regions were formed by laser-doping a sequence of lines which were spaced 20 μm using a 532 nm laser and a speed of 500 mm/s and laser power of 15 W.