Laser-Doping through Anodic Aluminium Oxide Layers for Silicon Solar Cells

Figure 4

Scanning electron microscope top-view images of (a) a line laser-doped through the boron spin-on dopant source; (b) a line laser-doped through an AAO layer which was formed by anodisation of aluminium in 0.5 M H₂SO₄; and (c) a line laser-doped through an AAO layer which was formed by anodisation of aluminium at 25 V in an electrolyte comprising 0.5 M H₂SO₄ and 0.5 M of H₃BO₃. All the lines were scribed by a 532 nm laser using a speed of 500 mm/s and power of 15 W.

(a)

(b)

(c)