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Journal of Nanomaterials
Volume 2015, Article ID 872793, 8 pages
Research Article

Homoepitaxial Nanostructures of Zinc Oxide

1Department of Material Sciences, Moscow State University, Leninskie Gory 3, Moscow 1199992, Russia
2Department of Chemistry, Moscow State University, Leninskie Gory 3, Moscow 1199992, Russia
3Physics Department, QSRC, Dongguk University, 3-26 Pildong, Junggu, Seoul 100-715, Republic of Korea
4Institute for Microelectronics Technology of Russian Academy of Science, Chernogolovka 142432, Russia

Received 31 August 2015; Accepted 20 October 2015

Academic Editor: Giovanni Bongiovanni

Copyright © 2015 Tatiana V. Plakhova et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


The homoepitaxial ZnO nanostructures (HENS) were obtained on different substrates using various techniques. The first type of homoepitaxial ZnO nanorod arrays was grown on Si or ITO substrates by using two alternative sequences: (a) seeding growth from solution growth from vapor and contrariwise (b) seeding growth from vapor growth from solution. As follows from transport and cathode luminescence measurements homoepitaxial growth allows enhancing electrical or luminescence properties. The second type of HENS was prepared by growth of vertically or horizontally oriented ZnO nanorod arrays depending on monocrystalline ZnO wafers with and orientation. In all cases the growth occurs along the -axis of fast growth.