Mobility Limitations due to Dislocations and Interface Roughness in AlGaN/AlN/GaN Heterostructure

Figure 6

Temperature dependence of the mobility limited by individual scattering mechanisms including dislocation scattering (), interface roughness scattering (), charged impurity scattering (), acoustic DP scattering (), acoustic PE scattering (), PO phonon scattering (), and all mentioned scattering mechanisms (). The scattered symbols are the experimental data.