Superior PSZ-SOD Gap-Fill Process Integration Using Ultra-Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond

<div>The thickness uniformity of blanket wafer by varied dispensation amount of PSZ-SOD solution with and without surface treatment step in low dispensation and conventional condition.</div>

Journal of Nanomaterials

fig3

Figure 3

Figure 3: Superior PSZ-SOD Gap-Fill Process Integration Using Ultra-Low Dispensation Amount in STI for 28 nm NAND Flash Memory and Beyond 