Characterization of Line Nanopatterns on Positive Photoresist Produced by Scanning Near-Field Optical Microscope

Figure 2

(a) A ShFM image and a 3D version of ShFM image of a line produced by SNOM with scan speed of 10 μm/s at a constant laser power. The shear force feedback is used to detect the morphological changes of the photoresist surface after exposure. (b) Cross-sectional profile of the same line. The measured width and depth of the line are 200 nm and 15 nm, respectively.

(a)

(b)