Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Figure 4

The ground-state donor binding energy in cylindrical WZ GaN/Al_xGa_1−xN strained QD as a function of the radius for  nm,  nm, and several values of the hydrostatic pressure .