Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Figure 7

The ground-state donor binding energy in cylindrical WZ GaN/Al_xGa_1−xN strained QD as a function of the hydrostatic pressure (P) with  nm and and for different QD heights and barrier thicknesses.