Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Figure 8

The ground-state donor binding energy in cylindrical WZ GaN/Al_xGa_1−xN strained QD as a function of the barrier thickness along the QD growth direction for  nm,  nm, and several values of the hydrostatic pressure P.