Research Article
Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/AlxGa1−xN Strained Quantum Dots
Figure 9
The ground-state donor binding energy in a cylindrical WZ GaN/AlxGa1−xN strained QD as a function of the axial impurity position for nm, nm, nm, and several values of the hydrostatic pressure P.