Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Table 1

Lattice constant (in units of nm), effective mass (in units of a free-electron mass ), piezoelectric constants and (in units of C/m²), and deformation potentials , , , and (in units of eV) for GaN and AlN.

GaN	0.3189^a	0.18^a	0.2^a	−0.44^b	0.67^b	−4.09^c	−8.87^c	−7.02^c	3.65^c
AlN	0.3112^a	0.25^a	0.33^a	−0.53^b	1.50^b	−3.39^c	−11.81^c	−9.42^c	4.02^c

Reference [14], ^bReference [28], and ^cReference [18].