Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Table 2

Band gap (in units of eV), spontaneous polarization (in units of C/m²), elastic constants , , , and (in units of GPa), Phillips iconicity parameter , and the high frequency dielectric constant for GaN and AlN.

GaN	3.507^a	−0.034^a	365^b	139^b	101^b	405^b	0.5^a	5.20^a	5.39^a
AlN	6.230^a	−0.090^a	397^b	143^b	112^b	371^b	0.499^a	4.30^a	4.52^a

Reference [7]; ^bReference [28].