Barrier Thickness and Hydrostatic Pressure Effects on Hydrogenic Impurity States in Wurtzite GaN/Al_xGa_1−xN Strained Quantum Dots

Table 4

Band gap pressure coefficient (meV/GPa), phonon frequencies and (cm⁻¹) for GaN and AlN, and Grüneisen parameter of phonon mode .

GaN	39^a	757^b	748^b	568^b	540^b	0.91^b	0.82^b	1.18^b	1.02^b
AlN	40^a	924^b	898^b	677^b	318^b	0.99^b	0.98^b	1.19^b	1.21^b

Reference [29]; ^bReference [28].