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Journal of Nanomaterials
Volume 2015 (2015), Article ID 956101, 10 pages
http://dx.doi.org/10.1155/2015/956101
Research Article

Electrical Properties of Nanoscale ZnS Thin Film Transistor

Semiconductor Engineering, Cheongju University, 298 Daesung-ro Chungwon-ku, Cheongju 360-764, Republic of Korea

Received 3 March 2015; Revised 28 May 2015; Accepted 2 June 2015

Academic Editor: Edward A. Payzant

Copyright © 2015 Teresa Oh. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Teresa Oh, “Electrical Properties of Nanoscale ZnS Thin Film Transistor,” Journal of Nanomaterials, vol. 2015, Article ID 956101, 10 pages, 2015. doi:10.1155/2015/956101