Preparation of Cu₂Sn₃S₇ Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

Figure 6

TEM morphology and SAED patterns of CTS sintered at 500°C. (a) Morphology of CTS-Mo interface and SAED patterns, (b) and (c) Mo-rich IMC, (d) and (e) CTS layer, and (f) and (g) Mo layer.

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