Preparation of Cu₂Sn₃S₇ Thin-Film Using a Three-Step Bake-Sulfurization-Sintering Process and Film Characterization

Table 2

Hall 4-point measurements of CTS after sintering at various temperatures.

CTS	200°C	500°C	600°C
Bulk resistivity (Ohm·cm)	3.3899 × 10^−2	1.6038 × 10^−1	1.8678
Sheet resistivity (Ohm·Sq.)	3.3899	1.6038 × 10	1.8678 × 10^2
Bulk carrier concentration (cm^−3)	2.6494 × 10^20	2.1088 × 10^17	9.7608 × 10^15
Sheet carrier concentration (cm^−2)	2.6494 × 10^18	2.1088 × 10^15	9.7608 × 10^13
Mobility (cm^2/Vs)	6.9590 × 10^−1	1.8479 × 10^2	3.4282 × 10^2
Conductivity	P-type	P-type	P-type