Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

Figure 3

(a) The device resistance as a function of applied magnetic field alone in-plane easy axis under bias current of 10 uA. The orange/blue arrow represents the magnetization direction of the reference/free layer. (b) Current-induced magnetoresistance oscillations for one representative device for positive current between 0.5 μA and 4 μA with 0.5 μA steps at zero magnetic field. A vertical offset of 2 nW/GHz is applied to the curves for visual clarity.

(a)

(b)