High Current-Induced Electron Redistribution in a CVD-Grown Graphene Wide Constriction

Figure 3

(a) The conductance in the CVD graphene wide constriction as a function of at = 1.8 K from = 0 to −10 V with source-drain current = 3 nA. (b) Electrostatic force microscopy phase image of the graphene device, with = 2 V and at = 1.8 K, which obviously shows the single layer graphene wide constriction region. (c) Lift-mode low-temperature scanning gate images with back gate voltage = −6 V and = 1.8 K. The white dash line shows the outline of single layer graphene wide constriction region.