Magnetic and Electrical Properties of Heusler Alloy Co₂MnSi Thin Films Grown on Ge(001) Substrates via an Al₂O₃ Tunnel Barrier

Figure 1

(a) Typical magnetic hysteresis curves at 290 K for Co₂MnSi films after deposition annealed with temperature ranging from 400°C to 500°C, where the magnetic field was applied in the plane of the film. (b) values as a function of at 290 K for Co₂MnSi films.

(a)

(b)