Magnetic and Electrical Properties of Heusler Alloy Co₂MnSi Thin Films Grown on Ge(001) Substrates via an Al₂O₃ Tunnel Barrier

Figure 2

(a) A schematic diagram of the device structure and the three-terminal circuit geometry for measuring I-V characteristics. (b) Typical I-V characteristics of a Co₂MnSi/Al₂O₃/n-Ge junction having a junction area of 60 × 60 μm² together with a fit to Simmon’s model (dotted line).

(a)

(b)