Metal/Metal-Oxide Nanoclusters for Gas Sensor Applications

Figure 10

(a) Temperature dependence of the sensor resistance. The circles are experimental data and the line is a linear fit for activation energy of 25 meV. Inset: schematic illustration of a cluster film between two contacts. The main conduction paths are illustrated by the black lines, with tunnel gaps depicted by zigzag lines. (b) Transient response of a typical Pd cluster tunneling sensor to the hydrogen levels indicated. (c) Response at room temperature as a function of hydrogen pressure, given as the percentage of atmospheric pressure for 3.5 nm clusters and 6 nm nanoclusters. Response of a sensor fabricated with 5 nm clusters, measured at 50°C. The solid lines are experimental data, and the filled circles with dashed lines are theoretical fits. Reprinted with AIP permission from [15].

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