Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes

<div>XRD rocking curves obtained for (a) the symmetric GaN(002) plane and (b) the asymmetric GaN(102) plane of GaN epilayers grown on CSS and various FTP-PSSs.</div>

Journal of Nanomaterials

fig3

Figure 3

Figure 3: Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes 

Figure 3 | Effect of Top-Region Area of Flat-Top Pyramid Patterned Sapphire Substrate on the Optoelectronic Performance of GaN-Based Light-Emitting Diodes 