Research Article
Structure and Properties of Nanocrystalline (TiZr)xN1−x Thin Films Deposited by DC Unbalanced Magnetron Sputtering
Table 1
Deposition conditions of TiZrN thin films.
| Precoating conditions | | Base vacuum pressure | 6.7 10−4 Pa (5 10−6 torr) | Bombardment voltage | −1000 V | Bombardment time | 5 min | Coating conditions | | Current density | Ti: 0.24 A Zr: 0.24 A | Working pressure | 0.17 Pa (1.3 10−3 torr) | Substrate bias | −80 V | Coating temperature | 400°C | Deposition time | 40 min | Ar flow rate | 30 sccm | N2 flow rate | 0~2.5 sccm |
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