Out-of-Plane and In-Plane Magnetization Behavior of Dipolar Interacting FeNi Nanoislands around the Percolation Threshold

Figure 6

The temperature dependence of the normalized remanent magnetization, produced by the in-plane and out-of-plane magnetizing field T at  K in the studied FeNi film samples (Al₂O₃ (2.1 nm)/FeNi ()/Sitall substrate) with the nominal film thickness (a) 1.10 nm and (b) 2.04 nm. Arrows indicate the magnetization response () with cycling temperature from 10 K to 300 K and back, down to low temperatures. The displayed symbols are larger than the error bars. The solid curves are the guides to the eye.