Journal of Nanomaterials / 2016 / Article / Tab 1

Research Article

XPS Studies of Electrodeposited Grown F-Doped ZnO Rods and Electrical Properties of p-Si/n-FZN Heterojunctions

Table 1

The diode parameters of the fabricated heterojunction diodes.

Diode-Cheung-CheungNorde
Cheung function
(eV) (kΩ) (kΩ) (eV) (kΩ) (eV)

D03.870.7476.213.44290.000.8019.300.82
D14.050.73105.983.85300.070.70119.000.77
D54.310.68107.974.49240.820.5766.300.71
D103.060.7381.443.86149.250.6996.000.77
D153.980.6852.644.1088.950.651.940.71
D353.960.7255.815.50325.670.4654.100.73

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