The Luminescent Properties and Atomic Structures of As-Grown and Annealed Nanostructured Silicon Rich Oxide Thin Films

Table 1

Comparison of experimental results versus theoretical calculations. Energy of the optical bang gap obtained experimentally by Tauc’s method for SRO films with different Ro values and times of thermal treatment.

Band gap, (eV)
	Annealed at 1100°C; (experimental results)			Theoretical results
Ro	30 min	60 min	180 min	Structure	Calculated band gap, (eV)
10	2.4 ± 0.04	2.4 ± 0.02	2.43 ± 0.04	Si11O11:H12 (completely hydrogen saturated structure or as-grown structure)	5.766
20	3.57 ± 0.03	3.6 ± 0.06	3.69 ± 0.03	Si11O11 (fully annealed structure)	2.709
30	3.73 ± 0.06	3.86 ± 0.04	3.89 ± 0.04	Si14O14:H12	5.221
				Si14O14:H10	4.656
				Si14O14:H8	4.611
				Si14O14:H6	4.495
				Si14O14:H4	4.404
				Si14O14 (fully annealed structure)	3.256