Charge Trapping in Monolayer and Multilayer Epitaxial Graphene

<div><i>n</i>(<i>T</i>) under different vacuum annealing conditions. From bottom to top: as prepared, annealing at<i> T</i> = 383 K for 5 minutes, annealing at<i> T</i> = 393 K for 5 minutes, and annealing at<i> T</i> = 423 K for 5 minutes, respectively.</div>

Journal of Nanomaterials

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Figure 4

Figure 4: Charge Trapping in Monolayer and Multilayer Epitaxial Graphene 