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Journal of Nanomaterials
Volume 2016, Article ID 7825456, 11 pages
Research Article

The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

1Industrial University of HCMC, Ho Chi Minh City 700000, Vietnam
2Faculty of Foundation Sciences, HCMC University of Technology and Education, Ho Chi Minh City 700000, Vietnam
3Faculty of Physics and Engineering Physics, University of Sciences, VNU-HCMC, Ho Chi Minh City 700000, Vietnam
4Faculty of Material Sciences, University of Sciences, VNU-HCMC, Ho Chi Minh City 700000, Vietnam

Received 14 March 2016; Accepted 8 May 2016

Academic Editor: Zhaoyao Zhan

Copyright © 2016 Huu Phuc Dang et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.


Transparent Sb-doped tin oxide (ATO) thin films were fabricated on quartz glass substrates via a mixed (SnO2 + Sb2O3) ceramic target using direct current (DC) magnetron sputtering in ambient Ar gas at a working pressure of 2 × 10−3 torr. X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), Hall-effect, and UV-vis spectra measurements were performed to characterize the deposited films. The substrate temperature of the films was investigated in two ways: (1) films were annealed in Ar ambient gas after being deposited at room temperature or (2) they were deposited directly at different temperatures. The first process for fabricating the ATO films was found to be easier than the second process. The deposited films showed p-type electrical properties, a polycrystalline tetragonal rutile structure, and their average transmittance was greater than 80% in the visible light range at the optimum annealing temperature of 500°C. The best electrical properties of the film were obtained on a 10 wt% Sb2O3-doped SnO2 target with a resistivity, hole concentration, and Hall mobility of 0.55 Ω·cm, 1.2 × 1019 cm−3, and 0.54 cm2V−1s−1, respectively.