The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

Figure 14

The I-V characteristics of the p-type ATO/n-Si heterojunction. The insets show a schematic diagram of the p-n heterojunction (upper left) and the I-V characteristics of In contacts on the p-type and n-type (lower right).