The Optimum Fabrication Condition of p-Type Antimony Tin Oxide Thin Films Prepared by DC Magnetron Sputtering

Table 4

The results of the Hall measurements of (a) 5% ATO, (b) 10% ATO, and (c) 15% ATO films annealed at 500°C after being deposited at room temperature.

Sample	Sb2O3 concentration (wt%)	(Ω·cm)	(cm^2V^−1s^−1)	(cm^−3)	Type
A16	5	36.80	0.18	9.5 × 10^17	p
A17	10	0.55	0.54	1.2 × 10^19	p
A13	15	0.78	2.48	3.2 × 10^18	p