Table of Contents Author Guidelines Submit a Manuscript
Journal of Nanomaterials
Volume 2016, Article ID 8202405, 7 pages
http://dx.doi.org/10.1155/2016/8202405
Research Article

Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

1School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China
2State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
3College of Electromechanical Engineering, Guangdong Polytechnic Normal University, Guangzhou 510635, China
4School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

Received 27 June 2016; Accepted 16 August 2016

Academic Editor: Jia Liu

Copyright © 2016 Zhanxu Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

The indium tin oxide (ITO) has been widely applied in light emitting diodes (LEDs) as the transparent current spreading layer. In this work, the performance of GaN-based blue light LEDs with nanopatterned ITO electrode is investigated. Periodic nanopillar ITO arrays are fabricated by inductive coupled plasma etching with the mask of polystyrene nanosphere. The light extraction efficiency (LEE) of LEDs can be improved by nanopatterned ITO ohmic contacts. The light output intensity of the fabricated LEDs with nanopatterned ITO electrode is 17% higher than that of the conventional LEDs at an injection current of 100 mA. Three-dimensional finite difference time domain simulation matches well with the experimental result. This method may serve as a practical approach to improving the LEE of the LEDs.