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Journal of Nanomaterials
Volume 2016, Article ID 8202405, 7 pages
http://dx.doi.org/10.1155/2016/8202405
Research Article

Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

1School of Electronic and Information, Guangdong Polytechnic Normal University, Guangzhou 510665, China
2State Key Laboratory of Optoelectronic Materials and Technologies, School of Materials Science and Engineering, Sun Yat-Sen University, Guangzhou 510275, China
3College of Electromechanical Engineering, Guangdong Polytechnic Normal University, Guangzhou 510635, China
4School of Electronics and Information Technology, Sun Yat-Sen University, Guangzhou 510275, China

Received 27 June 2016; Accepted 16 August 2016

Academic Editor: Jia Liu

Copyright © 2016 Zhanxu Chen et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

Zhanxu Chen, Wenjie Liu, Wei Wan, et al., “Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode,” Journal of Nanomaterials, vol. 2016, Article ID 8202405, 7 pages, 2016. https://doi.org/10.1155/2016/8202405.