Performance of GaN-Based LEDs with Nanopatterned Indium Tin Oxide Electrode

Figure 2

SEM images of the nanopillar patterned ITO layer. Scale bars are 400 nm. (a) The original surface of ITO layer. (b)–(d) 30° tilt SEM images of samples A, B, and C, respectively. (e)-(f) Cross-sectional image of samples B and C. The ITO layers of samples A, B, and C were etched by ICP etching for 60 s, 80 s, and 100 s, respectively.

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