Effect of a Balanced Concentration of Hydrogen on Graphene CVD Growth

Table 1

Experimental conditions of different samples of growth graphene. The variation in the precursor flows, growth time, pressure, and substrate pretreatment are being demonstrated.

Sample	Methane; flow (scc)	Hydrogen flow (sccm)		Total time; (min)	Pressure (Pa)	Pretreatment	Crystal size (μm^2)
A	5	20		20	20	Hydrogen plasma etching	~50
B	5	20		40	20	Hydrogen plasma etching	~60
C	5	First 20 min, 20 sccm	Last 20 min, 0 sccm	40	20	Hydrogen plasma etching	~60 (full cover)
D	5	20		20	20	Chemical etching	Bad shaped