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Journal of Nanomaterials
Volume 2016, Article ID 9806386, 9 pages
http://dx.doi.org/10.1155/2016/9806386
Research Article

Influence of Surface Treatment and Annealing Temperature on the Recombination Processes of the Quantum Dots Solar Cells

1Department for Management of Science and Technology Development, Ton Duc Thang University, Ho Chi Minh City, Vietnam
2Faculty of Applied Sciences, Ton Duc Thang University, Ho Chi Minh City, Vietnam
3University of Science, Vietnam National University, Ho Chi Minh City, Vietnam
4Vietnam National University, Ho Chi Minh City, Vietnam

Received 12 June 2016; Revised 31 August 2016; Accepted 4 September 2016

Academic Editor: Taeseup Song

Copyright © 2016 Tung Ha Thanh et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

We have studied the effect of the surface treatment of the CdS/CdSe quantum dots (QDs) by passivation ZnS layers and annealing temperature on the recombination resistance of the quantum dots solar cells (QDSSCs) based on TiO2/CdS/CdSe/ZnS photoanodes. The recombination resistance at TiO2/QDs contact and in TiO2 film decreased when the QDs were added to the passivation ZnS layers. Furthermore, we used the F ions linker and found the best annealing temperature conditions to reduce the recombination resistance of the QDSSCs. As a result, the current density increased from 7.85 mA/cm2 to 14 mA/cm2.