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Journal of Nanomaterials
Volume 2017, Article ID 1629702, 8 pages
https://doi.org/10.1155/2017/1629702
Research Article

Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

1Instituto Politécnico Nacional, Centro de Investigación en Biotecnología Aplicada Unidad Tlaxcala, Carretera a Santa Inés Tecuexcomac, a 1.5 Km, Ex-Hacienda San Juan Molino, Ciudad de México, Mexico
2CIDS-ICUAP, Benemérita Universidad Autónoma de Puebla, 14 Sur y Avenida San Claudio, Edif. 137, 72570 Puebla, PUE, Mexico
3Escuela Superior de Ingeniería Mecánica y Eléctrica Unidad Ticomán, Instituto Politécnico Nacional, 07340 Ciudad de México, Mexico

Correspondence should be addressed to F. Severiano; moc.liamtoh@700pancho

Received 11 January 2017; Revised 19 February 2017; Accepted 19 February 2017; Published 23 March 2017

Academic Editor: Shijun Liao

Copyright © 2017 F. Severiano et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

How to Cite this Article

F. Severiano, G. García, L. Castañeda, and V. L. Gayou, “Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices,” Journal of Nanomaterials, vol. 2017, Article ID 1629702, 8 pages, 2017. https://doi.org/10.1155/2017/1629702.