Porous Silicon and Indium Doped Zinc Oxide Junctions: Synthesis, Characterization, and Application to Electroluminescent Devices

Table 2

Optical and electrical properties of the ZnO:In thin film utilized in the obtaining ELD.

Sample	Thickness (nm); ± 5.0%	Transmittance (400–700 nm); (%)	Electrical resistivity × 10^−1 (Ωcm) ± 5.0%
ZnO:In/SLGS	350	45	2.05