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Journal of Nanomaterials
Volume 2017 (2017), Article ID 2560436, 6 pages
https://doi.org/10.1155/2017/2560436
Research Article

Effect of Annealing Temperature and Spin Coating Speed on Mn-Doped ZnS Nanocrystals Thin Film by Spin Coating

1Centre for Pre-University Studies, Universiti Malaysia Sarawak, 94300 Kota Samarahan, Sarawak, Malaysia
2Institute of Microengineering and Nanoelectronics, Universiti Kebangsaan Malaysia, 43600 Bangi, Selangor, Malaysia

Correspondence should be addressed to Noor Azie Azura Mohd Arif; ym.saminu@aruzaanam

Received 7 October 2016; Revised 13 December 2016; Accepted 19 December 2016; Published 4 January 2017

Academic Editor: Biswanath Bhoi

Copyright © 2017 Noor Azie Azura Mohd Arif et al. This is an open access article distributed under the Creative Commons Attribution License, which permits unrestricted use, distribution, and reproduction in any medium, provided the original work is properly cited.

Abstract

ZnS:Mn nanocrystals thin film was fabricated at 300°C and 500°C via the spin coating method. Its sol-gel was spin coated for 20 s at 3000 rpm and 4000 rpm with metal tape being used to mold the shape of the thin film. A different combination of these parameters was used to investigate their influences on the fabrication of the film. Optical and structural characterizations have been performed. Optical characterization was analyzed using UV-visible spectroscopy and photoluminescence spectrophotometer while the structural and compositional analysis of films was measured via field emission scanning electron microscopy and energy dispersive X-ray. From UV-vis spectra, the wavelength of the ZnS:Mn was 250 nm and the band gap was within the range 4.43 eV–4.60 eV. In room temperature PL spectra, there were two emission peaks centered at 460 nm and 590 nm. Under higher annealing temperature and higher speed used in spin coating, an increase of 0.05 eV was observed. It was concluded that the spin coating process is able to synthesize high quality spherical ZnS:Mn nanocrystals. This conventional process can replace other high technology methods due to its synthesis cost.